SI5481DU-T1-GE3【PDF 2/9 页】MOSFET P-CH 20V 12A PPAK CHIPFET

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Si5481DU

Vishay Siliconix

SPECIFICATIONS T J = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V DS Temperature Coefficient

V GS(th) Temperature Coefficient

V DS

Δ V DS /T J

Δ V GS(th) /T J

V GS = 0 V, I D = - 250 μA

I D = - 250 μA

- 20

- 15.5

2.5

V

mV/°C

Gate-Source Threshold Voltage

V GS(th)

V DS = V GS , I D = - 250 μA

- 0.4

-1

V

Gate-Source Leakage

Zero Gate Voltage Drain Current

On-State Drain Current a

I GSS

I DSS

I D(on)

V DS = 0 V, V GS = ± 8 V

V DS = - 20 V, V GS = 0 V

V DS = - 20 V, V GS = 0 V, T J = 55 °C

V DS ≤ 5 V, V GS = - 4.5 V

V GS = - 4.5 V, I D = - 6.5 A

20

0.018

± 100

-1

- 10

0.022

nA

μA

A

Drain-Source On-State Resistance a

R DS(on)

V GS = - 2.5 V, I D = - 5.7 A

0.024

0.029

Ω

V GS = - 1.8 V, I D = 2.4 A

0.033

0.041

Forward Transconductance a

g fs

V DS = - 10 V, I D = - 6.5 A

25

S

Dynamic b

Input Capacitance

C iss

1610

Output Capacitance

Reverse Transfer Capacitance

C oss

C rss

V DS = - 10 V, V GS = 0 V, f = 1 MHz

300

200

pF

Total Gate Charge

Gate-Source Charge

Q g

Q gs

V DS = - 10 V, V GS = - 8 V, I D = - 9.7 A

V DS = - 10 V, V GS = - 4.5 V, I D = - 9.7 A

33

20

2.8

50

30

nC

Gate-Drain Charge

Q gd

5.1

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off DelayTime

R g

t d(on)

t r

t d(off)

f = 1 MHz

V DD = - 10 V, R L = 1.3 Ω

I D ? - 7.8 A, V GEN = - 4.5 V, R g = 1 Ω

8

13

50

90

20

75

135

Ω

Fall Time

Turn-On Delay Time

t f

t d(on)

167

6

250

15

ns

Rise Time

Turn-Off DelayTime

Fall Time

t r

t d(off)

t f

V DD = - 10 V, R L = 1.3 Ω

I D ? - 7.8 A, V GEN = - 8 V, R g = 1 Ω

25

90

167

40

135

250

Drain-Source Body Diode Characteristics

Continous Source-Drain Diode Current

Pulse Diode Forward Current a

I S

I SM

T C = 25 °C

- 14.8

20

A

Body Diode Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Reverse Recovery Fall Time

Reverse Recovery Rise Time

V SD

t rr

Q rr

t a

t b

I S = - 7.8 A, V GS = 0 V

I F = - 7.8 A, dI/dt = 100 A/μs, T J = 25 °C

- 0.8

30

17

14

16

- 1.2

60

30

V

ns

nC

ns

Notes:

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

2

Document Number: 73777

S-81448-Rev. C, 23-Jun-08

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